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2PB710AQ View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
2PB710AQ
Philips
Philips Electronics Philips
2PB710AQ Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
PNP general purpose transistor
Product specification
2PB710A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
fT
collector cut-off current
emitter cut-off current
DC current gain
2PB710AQ
IE = 0; VCB = 60 V
IE = 0; VCB = 60 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 150 mA; VCE = 10 V; note 1
2PB710AR
2PB710AS
DC current gain
IC = 500 mA; VCE = 10 V; note 1
collector-emitter saturation voltage IC = 300 mA; IB = 30 mA; note 1
base-emitter saturation voltage IC = 300 mA; IB = 30 mA; note 1
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
transition frequency
2PB710AQ
IC = 50 mA; VCE = 10 V;
f = 100 MHz; note 1
2PB710AR
2PB710AS
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
MIN.
MAX.
10
5
10
UNIT
nA
µA
nA
85
170
120
240
170
340
40
600 mV
1.5
V
15
pF
100
120
140
MHz
MHz
MHz
1999 May 31
3
 

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