NZT7053 View Datasheet(PDF) - Fairchild Semiconductor
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Description
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NZT7053 Datasheet PDF : 4 Pages
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Typical Characteristics (continued)
NPN Darlington Transistor
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
2
β = 1000
1.6
- 40°C
25 °C
1.2
125 °C
0.8
0.4
0
10
100
1000
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs. Ambient Temperature
100
VCB = 80V
10
1
0.1
0.01
25
50
75
100
125
TA- AMBIENT TEMPERATURE (º C)
P 06
Typical Collector-Emitter Leakage
Current vs Temperature
1000
100
VCE = 80V
V BE = 0
10
1
0.1
0
40
80
120
160
TJ - JUNCTION TEMPERATURE ( ºC)
Base Emitter ON Voltage vs
Collector Current
2
1.6
- 40°C
1.2
0.8
25 °C
125 °C
0.4
VCE= 5V
0
10
100
I C - COLLECTOR CURRENT (mA)
P 06
1000
Junction Capacitance vs
Reverse Bias Voltage
100
10
1
0.1
C ib
1
10
REVERSE BIAS VOLTAGE (V)
C cb
100
Power Dissipation vs
Ambient Temperature
1
0. 75
TO-92
SOT-223
TO-226
0 .5
0. 25
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
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