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2N6344A View Datasheet(PDF) - ON Semiconductor

Part Name
Description
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2N6344A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2N6344A, 2N6348A, 2N6349A
MAXIMUM RATINGS
Characteristics
Symbol
Value
Unit
*Peak Repetitive Off−State Voltage (Note 1)
(Gate Open, TJ = −40 to +110°C, Sine Wave 50 to 60 Hz, Gate Open)
2N6344A, 2N6348A
2N6349A
VDRM,
VRRM
V
600
800
*On−State RMS Current (Full Cycle Sine Wave 50 to 60 Hz)
*Peak Non−repetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C)
Preceded and followed by rated current
(TC = +80°C)
(TC = +95°C)
IT(RMS)
ITSM
A
12
6.0
100
A
Circuit Fusing Consideration (t = 8.3 ms)
I2t
59
A2s
*Peak Gate Power (TC = +80°C, Pulse Width = 2.0 ms)
PGM
20
W
*Average Gate Power (TC = +80°C, t = 8.3 ms)
PG(AV)
0.5
W
*Peak Gate Current (Pulse Width = 2.0 ms; TC = +80°C)
IGM
2.0
A
*Peak Gate Voltage (Pulse Width = 2.0 ms; TC = +80°C)
VGM
"10
V
*Operating Junction Temperature Range
TJ
−40 to +125
°C
*Storage Temperature Range
Tstg
−40 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*Indicates JEDEC Registered Data.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
Symbol
RqJC
TL
Max
Unit
2.0
°C/W
260
°C
ORDERING INFORMATION
Device
2N6344A
2N6344AG
2N6348A
2N6348AG
2N6349A
2N6349AG
Package
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
Shipping
500 Units / Box
http://onsemi.com
2
 

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