40851 View Datasheet(PDF) - New Jersey Semiconductor
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40851 Datasheet PDF : 2 Pages
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i, LJnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973)376-8960
2N6077-2N6079, 40851
High-Voltage, High-Power Silicon N-P-N Transistor*
For Switching and Linear Applications
2N6077, 2N6078, 2N6079 and
40851 are multiple epitaxial silicon n-p-n
power transistors utilizing a multiple-
emitter-site structure. Multiple-epitaxial
construction maximizes the volt-ampere
characteristic of the device and provides
fast switching speeds. Multiple-emitter-
site design ensures uniform current flow
throughout the structure, which produces
a high IS/D and a Iar9* safe-operation area.
These devices use the popular JEDEC
TO-66 package; they differ mainly in vol-
tage ratings, leakage-current limits, and
Vc£(sat) ratings.
The 2N6077 is characterized for switching
applications with load lines in the active
region. These applications include sweep
circuits and all circuits using the Transistor
as an active voltage clamp.
Type 2N6078 is characterized for switch-
ing applications with the load line extend-
ing into the reverse-bias region. Its voltage
ratings make this device useful for switch-
jng regulators operating directly from a
rectified 110-V or 220-V power line. The
unit is rated to take surge currents up to
5 A and maintain saturation.
The 2N6079 is characterized for use in
inverters operating directly from a recti-
fied 110-V power line. The leakage cur-
rent is specified at 450 volts; therefore
the device can also be used in a series
bridge configuration on a 220-V line. The
VEBO rating of 9 volts eases requirements
on the drive transformer in inverter appli-
cations. Storage time, an important factor
in the frequency stability of an inverter,
is specified in Fig. 11, which shows varia-
tion in storage time with variation in load
current from zero to maximum (4 A).
The 40851 is characterized for use in
switching-regulator power supplies that
operate directly from a 120-V or 240-V
ac power line.
Features:
• Maximum safe-area-of-operation
curves
• Low saturation voltages
• High voltage ratings:
VCER(sus) = 300 V (2N6077)
275 V (2N6078)
375 V (2N6079)
• High dissipation rating: Pj = 45 W
TERMINAL DESIGNATIONS
MAXIMUM RATINGS, Absolute-Maximum Values:
2N6077
•COLLECTOR-TO-BASE VOLTAGE
COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE:
With ten even
• With ravtru bin (VBE) of -1.5V
CBO
300
VCEOlsutl
275
VCEX<»"«>
300
300
'EMinER-TO-BASE VOLTAGE
6
•COLLECTOR CURRENT:
Continuous
It*
'C
7
10
'CONTINUOUS BASE CURRENT
IB
4
'TRANSISTOR DISSIPATION:
Atc«*t*nip*fatunHupto250C
?T
45
At an nmpvnurn ibovt ZS°C
'TEMPERATURE RANGE:
StOfigi ft Operating (Junction)
P'N TEMPERATURE (During Soldering!:
—*' """tnett^ 1/32 in. (0.8 mm) from cut for 10Im«x. . . .
•» >VPM In accorcfanct with JEDEC ragiitrition dtu forirat (JS-6, RDF-1).
2N6078
275
2NB079
375
250 1
350
275
375
276
375
6
9
7
7
10
10
4
4
46
45
Dtritt linMrly to 200 C
— -66 to +200
230
40851
450
350
V
V
375
V
9
V
7
A
10
A
4
A
45
W
°c
°c
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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