2W01G View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
View to exact match
2W01G Datasheet PDF : 4 Pages
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2W005G thru 2W10G
Vishay General Semiconductor
100
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
10
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode
1
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
100
100
TJ = 125 °C
10
TJ = 100 °C
10
1
0.1
0.01
0
TJ = 25 °C
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1
0.1
0.01
0.1
1
10
100
t - Heating Time (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style WOG
0.388 (9.86)
0.348 (8.84)
0.220 (5.6)
0.160 (4.1)
1.0 (25.4) MIN.
0.032 (0.81)
0.028 (0.71)
0.060 (1.52)
0.020 (0.51)
0.348 (8.84)
0.308 (7.82)
0.220 (5.6)
0.180 (4.6)
0.220 (5.6)
0.180 (4.6)
Document Number: 88528 For technical questions within your region, please contact one of the following:
Revision: 15-Apr-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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