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1SV329TH3FT View Datasheet(PDF) - Toshiba

Part NameDescriptionManufacturer
1SV329TH3FT Diode Silicon Epitaxial Planar Type Toshiba
Toshiba Toshiba
1SV329TH3FT Datasheet PDF : 3 Pages
1 2 3
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV329
1SV329
VCO for UHF Band Radio
High capacitance ratio: C1 V/C4 V = 2.8 (typ.)
Low series resistance: rs = 0.55 (typ.)
Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
VR
10
V
Tj
125
°C
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
VR
IR
C1 V
C4 V
C1 V/C4 V
rs
IR = 1 μA
VR = 10 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
VR = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured: Vsig = 100 mVrms
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Min Typ. Max Unit
10
V
3
nA
5.7
6.7
pF
1.85 2.45 pF
2.7 2.8
0.55 0.7
Ω
1
2007-11-01
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