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1SV324 View Datasheet(PDF) - Toshiba

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1SV324 Datasheet PDF : 3 Pages
1 2 3
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV324
1SV324
TCXO/VCO
High capacitance ratio: C1 V/C4 V = 4.3 (typ.)
Low series resistance: rs = 0.4 (typ.)
Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
VR
10
V
Tj
125
°C
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
VR
IR
C1 V
C4 V
C1 V/C4 V
rs
IR = 1 μA
VR = 10 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
VR = 4 V, f = 100 MHz
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Min Typ. Max Unit
10
V
3
nA
44
49.5 pF
9.2
12
pF
4
4.3
0.4 0.8
Ω
1
2007-11-01
 

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