datasheetbank_Logo   Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name :   

1SV322 View Datasheet(PDF) - Toshiba

Part NameDescriptionManufacturer
1SV322 TOSHIBA Diode Silicon Epitaxial Planar Type Toshiba
Toshiba Toshiba
1SV322 Datasheet PDF : 3 Pages
1 2 3
TCXO/VCO
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV322
· High capacitance ratio: C1 V/C4 V = 4.3 (typ.)
· Low series resistance: rs = 0.4 (typ.)
· Useful for small size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
VR
Tj
Tstg
Rating
Unit
10
V
125
°C
-55~125
°C
1SV322
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
VR
IR
C1 V
C4 V
C1 V/C4 V
rs
IR = 1 mA
VR = 10 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
¾
VR = 4 V, f = 100 MHz
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Marking
JEDEC
JEITA
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Min Typ. Max Unit
10
¾
¾
V
¾
¾
3
nA
26.5 ¾ 29.5 pF
6.0
¾
7.1
pF
4.0
4.3
¾
¾
¾
0.4 0.8
W
1
2003-03-24
Direct download click here
 

Share Link : Toshiba
All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]