datasheetbank_Logo   Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name :   

1SV304 View Datasheet(PDF) - Toshiba

Part NameDescriptionManufacturer
1SV304 Silicon Epitaxial Planar Type Variable Capacitance Diode Toshiba
Toshiba Toshiba
1SV304 Datasheet PDF : 3 Pages
1 2 3
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV304
1SV304
VCO for VHF Band Radio
Small package
High capacitance ratio: C1 V/C4 V = 3.0 (typ.)
Low series resistance: rs = 0.27 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
VR
10
V
Tj
125
°C
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Symbol
Test Condition
VR
IR
C1 V
C4 V
C1 V/C4 V
rs
IR = 1 μA
VR = 10 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
VR = 1 V, f = 470 MHz
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Min Typ. Max Unit
10
V
3
nA
17.3 18.3 19.3 pF
5.3
6.1
6.6
pF
2.8
3
0.27 0.32 Ω
1
2007-11-01
Direct download click here
 

Share Link : Toshiba
All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]