datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

1SV288 View Datasheet(PDF) - Toshiba

Part Name
Description
View to exact match
1SV288 Datasheet PDF : 3 Pages
1 2 3
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV288
1SV288
CATV Tuning
Unit: mm
High capacitance ratio: C2 V/C25 V = 16 (typ.)
Low series resistance: rs = 0.92 (typ.)
Excellent C-V characteristics, and small tracking error.
Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Peak reverse voltage
Junction temperature
Storage temperature range
VR
VRM
Tj
Tstg
30
V
35 (RL = 10 kΩ)
V
125
°C
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
JEITA
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
VR
IR
C2 V
C25 V
C2 V/C25 V
rs
IR = 1 μA
VR = 28 V
VR = 2 V, f = 1 MHz
VR = 25 V, f = 1 MHz
VR = 5 V, f = 470 MHz
Note 1: Available in matched group for capacitance to 2.5%.
C (max) C (min) <= 0.025
C (min)
(VR = 2~25 V)
Marking
Min Typ. Max Unit
30
V
10
nA
41
45 49.5 pF
2.5
2.8
3.2
pF
15
16
0.92 1.05 Ω
1
2007-11-01
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]