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1SV283 View Datasheet(PDF) - Toshiba

Part NameDescriptionManufacturer
1SV283 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type Toshiba
Toshiba Toshiba
1SV283 Datasheet PDF : 3 Pages
1 2 3
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV283
CATV Tuning
· High capacitance ratio: C2 V/C25 V = 11.5 (typ.)
· Low series resistance: rs = 0.55 (typ.)
· Excellent C-V characteristics, and small tracking error.
· Useful for small size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Peak reverse voltage
Junction temperature
Storage temperature range
Symbol
VR
VRM
Tj
Tstg
Rating
Unit
34
V
36 (RL = 10 kW)
V
125
°C
-55~125
°C
1SV283
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Capacitance ratio
Series resistance
VR
IR
C2 V
C25 V
C2 V/C25 V
C25 V/C28 V
rs
IR = 1 mA
VR = 32 V
VR = 2 V, f = 1 MHz
VR = 25 V, f = 1 MHz
¾
¾
VR = 5 V, f = 470 MHz
Note 1: Available in matched group for capacitance to 2.0%.
C (max) - C (min)
C (min)
=< 0.02
(VR = 2~25 V)
Marking
JEDEC
JEITA
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Min Typ. Max Unit
34
¾
¾
V
¾
¾
10
nA
29
¾
34
pF
2.5
¾
2.9
pF
11.0 11.5 ¾
¾
1.03 ¾
¾
¾
¾ 0.55 0.7
W
1
2003-04-02
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