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1SV217 View Datasheet(PDF) - TY Semiconductor

Part NameDescriptionManufacturer
1SV217 Silicon Epitaxial Planar Diode Twtysemi
TY Semiconductor Twtysemi
1SV217 Datasheet PDF : 1 Pages
1
Product specification
1SV217
Features
High Capacitance Ratio:C2V/C2512V=10.5(Typ.)
Excellent C-V Characteristics,and Small Tracking Error.
Useful for Small Size Tuner.
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
P aram eter
Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
Symbol
VR
VRM
Tj
Tstg
Value
30
35 (RL=10K )
125
-55 to +125
Unit
V
V
Electrical Characteristics Ta = 25
P aram eter
Sym bol
Conditions
Reverse Voltage
VR
IR = 1 A
Reverse Current
IR
VR = 28 V
Capacitance
C2V
C25V
f = 1 MHz;VR = 2 V
f = 1 MHz;VR = 25 V
Capacitance Ratio
C2V/C25V
Series Resistance
rs
VR = 5V, f = 470 MHz
Note :
Available in m atched group for capacitance to 2.5% .
M in
30
33
2.6
11.5
Typ
36
2.88
12.5
0.83
Max
10
39
3.2
1.0
Unit
V
nA
pF
C (M a x.)-C (M in .)
C (M in .)
(VR=2~25V)
0.025
Marking
Marking
T6
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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