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1SV239TPH3F View Datasheet(PDF) - Toshiba

Part NameDescriptionManufacturer
1SV239TPH3F Silicon Epitaxial Planar Type Variable Capacitance Diode Toshiba
Toshiba Toshiba
1SV239TPH3F Datasheet PDF : 3 Pages
1 2 3
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV239
1SV239
VCO for UHF Radio
Ultra low series resistance: rs = 0.44 (typ.)
Useful for small size set
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
VR
15
V
Tj
125
°C
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Symbol
Test Condition
VR
IR
C2 V
C10 V
C2 V/C10 V
rs
IR = 1 μA
VR = 15 V
VR = 2 V, f = 1 MHz
VR = 10 V, f = 1 MHz
VR = 1 V, f = 470 MHz
Marking
Min Typ. Max Unit
15
V
3
nA
3.8 4.25 4.7
pF
1.5 1.75 2.0
pF
2.0 2.4
0.44 0.6
Ω
1
2007-11-01
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