1N4004G View Datasheet(PDF) - Won-Top Electronics
Part Name
Description
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1N4004G Datasheet PDF : 3 Pages
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WTE
POWER SEMICONDUCTORS
Features
! Glass Passivated Die Construction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
Mechanical Data
! Case: Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.35 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
1N4001G – 1N4007G
1.0A GLASS PASSIVATED RECTIFIER
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.4
—
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
1N
1N
1N
1N
1N
1N
1N
4001G 4002G 4003G 4004G 4005G 4006G 4007G
50
100 200 400 600 800 1000
Unit
V
RMS Reverse Voltage
VR(RMS)
35
70
140 280 420 560 700
V
Average Rectified Output Current
(Note 1)
@TA = 75°C
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
30
A
rated load (JEDEC Method)
Forward Voltage
@IF = 1.0A
VFM
1.0
V
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
IRM
5.0
50
µA
Typical Junction Capacitance (Note 2)
Cj
8.0
pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
RJA
100
K/W
Operating Temperature Range
Tj
-65 to +175
°C
Storage Temperature Range
TSTG
-65 to +175
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
1N4001G – 1N4007G
1 of 3
© 2002 Won-Top Electronics
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