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1.5KE110AG View Datasheet(PDF) - ON Semiconductor

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Description
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1.5KE110AG Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
1N6267A Series
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
1000
500
TL = 25°C
tP = 10 ms
200
VBR(NOM) = 6.8 to 13 V
20 V
24 V
43 V
100
50
20
10
5
1000
500
TL = 25°C
tP = 10 ms
200
100
50
20
10
5
1.5KE6.8CA
through
1.5KE200CA
VBR(NOM) = 6.8 to 13 V
20 V
24 V
43 V
75 V
180 V
120 V
2
1
0.3 0.5 0.7 1
2 3 5 7 10
20 30
DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)
2
1
0.3 0.5 0.7 1
2 3 5 7 10
20 30
DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)
Figure 6. Dynamic Impedance
1
0.7
0.5
0.3
0.2
PULSE WIDTH
0.1
10 ms
0.07
0.05
1 ms
0.03
0.02
100 ms
0.01
0.1 0.2
0.5 1 2
10 ms
5 10 20
50 100
D, DUTY CYCLE (%)
Figure 7. Typical Derating Factor for Duty Cycle
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 8.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 9. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
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