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1.5KE110ARL4(2007) View Datasheet(PDF) - ON Semiconductor

Part Name
Description
View to exact match
1.5KE110ARL4
(Rev.:2007)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
1.5KE110ARL4 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
1N6267A Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL 25°C
Steady State Power Dissipation
@ TL 75°C, Lead Length = 3/8 in
Derated above TL = 75°C
Thermal Resistance, Junction−to−Lead
Forward Surge Current (Note 2) @ TA = 25°C
Operating and Storage
Temperature Range
PPK
PD
RqJL
IFSM
TJ, Tstg
1500
5.0
20
20
200
− 65 to +175
W
W
mW/°C
°C/W
A
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
NOTES: Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max., IF (Note 3) = 100 A)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
QVBR
IF
VF
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Temperature Coefficient of VBR
Forward Current
Forward Voltage @ IF
I
IF
VC VBR VRWM
IIRT VF
V
IPP
Uni−Directional TVS
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