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BR9010FV View Datasheet(PDF) - ROHM Semiconductor

Part Name
Description
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BR9010FV Datasheet PDF : 17 Pages
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Memory ICs
BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F /
BR9040 / BR9040F
Operation timing characteristics
BR9040 / F: At 5V (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 5V ± 10%)
Parameter
Symbol Min. Typ. Max.
Unit
CS setup time
tCSS
200
ns
CS hold time
Data setup time
tCSH
0
ns
tDIS
150
ns
Data hold time
tDIH
150
ns
DO rise delay time
tPD1
350
ns
DO fall delay time
tPD0
350
ns
Self-timing programming cycle
tE / W
10
ms
CS minimum high level time
tCS
1
µs
READY / BUSY display valid time
tSV
1
µs
Time when DO goes High-Z (via CS)
tOH
0
400
ns
Data clock high level time
tWH
500
ns
Data clock low level time
tWL
500
ns
Write control setup time
tWCS
0
ns
Write control hold time
tWCH
0
ns
BR9040 / F: At 3V (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 3V ± 10%)
Parameter
Symbol Min. Typ. Max.
Unit
CS setup time
tCSS
200
ns
CS hold time
tCSH
0
ns
Data setup time
tDIS
150
ns
Data hold time
tDIH
150
ns
DO rise delay time VCC = 3.0 ~ 3.3V
tPD1
350
ns
DO fall delay time VCC = 3.0 ~ 3.3V
tPD0
350
ns
DO rise delay time VCC = 2.7 ~ 3.0V
tPD1
500
ns
DO fall delay time VCC = 2.7 ~ 3.0V
tPD0
500
ns
Self-timing programming cycle
tE / W
15
ms
CS minimum high level time
tCS
1
µs
READY / BUSY display valid time
tSV
1
µs
Time when DO goes High-Z (via CS)
tOH
0
400
ns
Data clock high level time VCC = 3.0 ~ 3.3V
tWH
500
ns
Data clock low level time VCC = 3.0 ~ 3.3V
tWL
500
ns
Data clock high level time VCC = 2.7 ~ 3.0V
tWH
650
ns
Data clock low level time VCC = 2.7 ~ 3.0V
tWL
650
ns
Write control setup time
tWCS
0
ns
Write control hold time
tWCH
0
ns
9
 

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