BR9020F View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

View to exact match

BR9020F

1, 2, and 4k bit EEPROMs for direct connection to serial ports

ROHM Semiconductor 

Memory ICs

BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F /

BR9040 / BR9040F

•Operation timing characteristics

BR9010 / F / FV: At 5V (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 5V ± 10%)

Parameter

Symbol Min. Typ. Max.

Unit

CS setup time

CS hold time

tCSS

200

—

—

ns

tCSH

0

—

—

ns

Data setup time

Data hold time

DO rise delay time

tDIS

150

—

—

ns

tDIH

150

—

—

ns

tPD1

—

—

350

ns

DO fall delay time

tPD0

—

—

350

ns

Self-timing programming cycle

tE / W

—

—

10

ms

CS minimum high level time

tCS

1

—

—

µs

Time when DO goes High-Z (via CS)

tOH

0

—

400

ns

Data clock high level time

Data clock low level time

Write control setup time

Write control hold time

tWH

450

—

—

ns

tWL

450

—

—

ns

tWCS

0

—

—

ns

tWCH

0

—

—

ns

•BR9010 / F / FV: At 3V (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 3V ± 10%)

Parameter

Symbol Min. Typ. Max.

Unit

CS setup time

tCSS

200

—

—

ns

CS hold time

tCSH

0

—

—

ns

Data setup time

tDIS

150

—

—

ns

Data hold time

tDIH

150

—

—

ns

DO rise delay time

tPD1

—

—

350

ns

DO fall delay time

tPD0

—

—

350

ns

Self-timing programming cycle

CS minimum high level time

tE / W

—

—

15

ms

tCS

1

—

—

µs

Time when DO goes High-Z (via CS)

tOH

0

—

400

ns

Data clock high level time

tWH

450

—

—

ns

Data clock low level time

tWL

450

—

—

ns

Write control setup time

tWCS

0

—

—

ns

Write control hold time

tWCH

0

—

—

ns

7

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