Memory ICs
BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F /
BR9040 / BR9040F
•Operation timing characteristics
BR9010 / F / FV: At 5V (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 5V ± 10%)
Parameter
Symbol Min. Typ. Max.
Unit
CS setup time
CS hold time
tCSS
200
—
—
ns
tCSH
0
—
—
ns
Data setup time
Data hold time
DO rise delay time
tDIS
150
—
—
ns
tDIH
150
—
—
ns
tPD1
—
—
350
ns
DO fall delay time
tPD0
—
—
350
ns
Self-timing programming cycle
tE / W
—
—
10
ms
CS minimum high level time
tCS
1
—
—
µs
Time when DO goes High-Z (via CS)
tOH
0
—
400
ns
Data clock high level time
Data clock low level time
Write control setup time
Write control hold time
tWH
450
—
—
ns
tWL
450
—
—
ns
tWCS
0
—
—
ns
tWCH
0
—
—
ns
•BR9010 / F / FV: At 3V (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 3V ± 10%)
Parameter
Symbol Min. Typ. Max.
Unit
CS setup time
tCSS
200
—
—
ns
CS hold time
tCSH
0
—
—
ns
Data setup time
tDIS
150
—
—
ns
Data hold time
tDIH
150
—
—
ns
DO rise delay time
tPD1
—
—
350
ns
DO fall delay time
tPD0
—
—
350
ns
Self-timing programming cycle
CS minimum high level time
tE / W
—
—
15
ms
tCS
1
—
—
µs
Time when DO goes High-Z (via CS)
tOH
0
—
400
ns
Data clock high level time
tWH
450
—
—
ns
Data clock low level time
tWL
450
—
—
ns
Write control setup time
tWCS
0
—
—
ns
Write control hold time
tWCH
0
—
—
ns
7