IRFP9140 View Datasheet(PDF) - Intersil
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IRFP9140 Datasheet PDF : 7 Pages
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IRFP9140
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
ISD
ISDM
Modified MOSFET Symbol
Showing the Integral Re-
verse P-N Junction
Diode
G
-
-
-19
A
D
-
-
-76
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
TJ = 25oC, ISD = -19A, VGS = 0V, (Figure 13)
TJ = 25oC, ISD = -18A, dISD/dt = 100A/µs
TJ = 25oC, ISD = -18A, dISD/dt = 100A/µs
-
- -1.5
V
- 210 -
ns
-
2.0
-
µC
NOTES:
2. Pulse test: pulse width ≤ 80µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, start TJ = 25oC, L = 4.2mH, RG = 25Ω, peak IAS = 19A. See Figures 15, 16.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
20
16
12
8
4
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.05
0.2
0.1 0.1
0.05
0.02
0.01
10-2
10-3
10-5
SINGLE PULSE
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (s)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ= PDM x ZθJC x RθJC + TC
1
10
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
4-59
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