01ZA8.2 View Datasheet(PDF) - Toshiba

Part Name

Description

View to exact match

01ZA8.2

DIODES( DIODES FOR PROTECTING AGAINST ESD)

Toshiba 

TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type

01ZA8.2

Diodes for Protecting Against ESD

· Because two devices are mounted on an ultra compact package, it is

possible to allow reducing the number of the parts and the mounting

cost.

Maximum Ratings (Ta = 25°C)

Characteristics

Power dissipation

Junction temperature

Storage temperature range

Symbol

P

Tj

Tstg

Rating

Unit

100

mW

125

°C

-55~125

°C

01ZA8.2

Unit: mm

Electrical Characteristics (Ta = 25°C)

Characteristics

Zener voltage

Dynamic impedance

Knee dynamic impedance

Reverse current

Symbol

VZ

ZZ

ZZK

IR

Test Condition

IZ = 5 mA

IZ = 5 mA

IZ = 0.5 mA

VR = 6.5 V

JEDEC

―

JEITA

―

TOSHIBA

1-2SA1A

Weight: g (typ.)

Min Typ. Max Unit

7.7

8.2

8.7

V

¾

15

¾

W

¾

20

¾

W

¾

¾

0.5

mA

Marking

Equivalent Circuit (top view)

1

2003-03-24

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