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K2008 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K2008 Silicon N Channel MOS FET Renesas
Renesas Electronics Renesas
K2008 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK2008
Static Drain to Source on State
Resistance vs. Temperature
0.5
0.4
VGS = 10 V
Pulse Test
0.3
ID = 20 A
0.2
0.1
5A
10 A
0
–40 0
40 80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
500
di/dt = 100 A/µs
200 VGS = 0, Ta = 25°C
100
50
20
10
5
0.5 1 2
5 10 20 50
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500
20
ID = 20 A
400
VDD = 50 V
16
100 V
300
200 V
12
200
100
0
0
8
VDD = 200 V
4
100 V
50 V
0
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
100
–25°C
30
Tc = 25°C
10
3
75°C
1
VDS = 10 V
Pulse Test
0.3
0.1
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
10000
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
100
Crss
VGS = 0
f = 1 MHz
1
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
200
100
tr
50
td(off)
tf
td(on)
20
VGS = 10 V, VDD =: 30 V
10
PW = 5 µs, duty <= 1%
5
0.5 1 2
5 10 20 50
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
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