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K2008 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K2008 Silicon N Channel MOS FET Renesas
Renesas Electronics Renesas
K2008 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK2008
Main Characteristics
Power vs. Temperature Derating
90
60
30
0
50
100
150
Case Temperature TC (°C)
Typical Output Characteristics
50
10 V 8 V Pulse Test
40
6V
30
5.5 V
20
5V
10
VGS = 4 V
0
4
8
12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
4
Pulse Test
3
20 A
2
10 A
1
ID = 5 A
0
4
8 12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
100
30
10
3
1 Operation in this
area is limited
by RDS(on)
0.3
Ta = 25°C
0.1
1 3 10 30
100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
40 Pulse Test
30
20
–25°C
10
Tc = 25°C
75°C
0
2
4
6
8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
5
2
1
0.5
0.2
0.1
0.05
1
VGS = 10 V
15 V
2
5 10 20 50 100
Drain Current ID (A)
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