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K2008 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K2008 Silicon N Channel MOS FET Renesas
Renesas Electronics Renesas
K2008 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK2008
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 250
Gate to source breakdown voltage V(BR)GSS ±30
Gate to source leak current
IGSS
Zero gate voltage drain current
IDSS
Gate to source cutoff voltage
VGS(off)
2.0
Static drain to source on state
resistance
RDS(on)
Forward transfer admittance
|yfs|
9.0
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Body to drain diode forward voltage VDF
Body to drain diode reverse
recovery time
trr
Note: 3. Pulse Test
Typ
0.12
14
2340
1000
160
30
125
190
100
1.2
120
Ratings
250
±30
20
80
20
60
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
±10
250
3.0
0.15
Unit
V
V
µA
µA
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS =200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 10 A, VGS = 10 V*3
S
ID = 10 A, VDS = 10 V*3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 10 A, VGS = 10 V,
ns RL = 3
ns
ns
V IF = 20 A, VGS = 0
ns IF = 20 A, VGS = 0,
diF / dt = 100 A / µs
Rev.2.00 Sep 07, 2005 page 2 of 6
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