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K1336 View Datasheet(PDF) - Renesas Electronics

Part Name
Description
View to exact match
K1336
Renesas
Renesas Electronics Renesas
K1336 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1336
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. PW 10 µs, duty cycle 1%
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch
Tch
Tstg
Item
Symbol
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
Forward transfer admittance
Input capacitance
|yfs|
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Body to drain diode forward voltage VDF
Body to drain diode reverse recovery trr
time
Note: 2. Pulse test
Min
60
±20
1.0
0.22
Typ
1.3
1.8
0.35
33
17
5
2
4
18
16
0.9
45
Ratings
60
±20
0.3
1.2
0.3
400
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
mW
°C
°C
Max
±10
50
2.0
1.7
2.5
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 50 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 0.2 A, VGS = 10 V *2
ID = 0.2 A, VGS = 4 V *2
ID = 0.2 A, VDS = 10 V *2
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 0.2 A, VGS = 10 V,
RL = 150
IF = 0.3 A, VGS = 0
IF = 0.3 A, VGS = 0,
diF/dt = 50 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
 

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