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K2933 View Datasheet(PDF) - Renesas Electronics

Part Name
Description
View to exact match
K2933 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK2933
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10µs, duty cycle 1 %
2. Value at Ta = 25°C
3. Value at Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note3
EAR Note3
Pch Note2
Tch
Tstg
Ratings
60
±20
15
60
15
15
19
25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 60
Gate to source breakdown voltage V(BR)GSS ±20
Zero gate voltage drain current
IDSS
Gate to source leak current
IGSS
Gate to source cutoff voltage
VGS(off)
1.5
Static drain to source on state
resistance
RDS(on)
RDS(on)
Forward transfer admittance
|yfs|
7
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Body–drain diode forward voltage
VDF
Body–drain diode reverse
recovery time
trr
Note: 4. Pulse test
Typ
0.040
0.060
11
500
260
110
10
80
100
110
0.9
50
Max
10
±10
2.5
0.052
0.105
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = 60 V, VGS = 0
VGS = ±16 V, VDS = 0
ID = 1 mA, VDS = 10 V
ID = 8 A, VGS = 10 V Note4
ID = 8 A, VGS = 4 V Note4
ID = 8 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
VGS = 10 V, ID = 8 A,
RL = 3.75
IF = 15 A, VGS = 0
IF = 15 A, VGS = 0
diF/ dt =50 A/ µs
Rev.4.00 Sep 07, 2005 page 2 of 7
 

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