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K1307 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name
Description
View to exact match
K1307
Hitachi
Hitachi -> Renesas Electronics Hitachi
K1307 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SK1307
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 100
Gate to source breakdown
voltage
V(BR)GSS ±20
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off) 1.0
Static drain to source on state RDS(on)
resistance
Forward transfer admittance |yfs|
10
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body to drain diode forward VDF
voltage
Body to drain diode reverse trr
recovery time
Note: 1. Pulse test
Typ Max Unit
V
V
±10 µA
250 µA
2.0
V
0.065 0.085
0.085 0.12
16
S
1300 —
pF
540 —
pF
160 —
pF
12
ns
100 —
ns
300 —
ns
150 —
ns
1.3
V
300 —
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 80 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 10 A, VGS = 10 V *1
ID = 10 A, VGS = 4 V *1
ID = 10 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 10 A, VGS = 10 V,
RL = 3
IF = 20 A, VGS = 0
IF = 20 A, VGS = 0,
diF/dt = 50 A/µs
See characteristic curves of 2SK1302.
3
 

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