K1307 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
View to exact match
K1307 Datasheet PDF : 7 Pages
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2SK1307
Static Drain to Source on State
Resistance vs. Temperature
0.20
0.16
Pulse Test ID = 20 A
10 A
0.12
VGS = 4 V
5A
0.08
20 A
5 A, 10 A
VGS = 10 V
0.04
0
–40
0
40 80 120 160
Case Temperature TC (°C)
1000
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
di/dt = 50 A/µs, Ta = 25°C
20
VGS = 0
Pulse Test
10
0.5 1.0 2
5 10 20 50
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
100
20
VDS
80
VDD
=
25
50
V
V
16
80 V
60
12
40
VGS
8
20
VDD = 80 V
50 V
25 V
ID = 20 A
4
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
–25°C
20
TC = 25°C
75°C
10
5
2
VDS = 10 V
Pulse Test
1
0.5
0.2 0.5 1.0 2
5 10 20
Drain Current ID (A)
10000
1000
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
VGS = 0
f = 1 MHz
Crss
10
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
1000
Switching Characteristics
500
td(off)
200
100
50
20
10
0.5
tf
tr
VGS
=
10
V,
VDD
=•
•
30
V
PW = 2 µs, duty < 1 %
td(on)
1.0 2
5 10 20 50
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
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