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2SK2724 View Datasheet(PDF) - Renesas Electronics

Part Name
Description
View to exact match
2SK2724
Renesas
Renesas Electronics Renesas
2SK2724 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK2724
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Drain to Source On-State Resistance RDS(on)1 VGS = 10 V, ID = 18 A
RDS(on)2
VGS = 4 V, ID = 18 A
Gate to Source Cutoff Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
|yfs|
VDS = 10 V, ID = 18 A
Drain Leakage Current
IDSS
VDS = 60 V, VGS = 0
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 10 V,
VGS = 0,
f = 1 MHz
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
ID = 18 A,
VGS(on) = 10 V,
VDD = 30 V,
RG = 10
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
ID = 35 A,
QGS
VDD = 48 V,
VGS = 10 V
QGD
Body Diode Forward Voltage
VF(S-D)
IF = 35 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 35 A, VGS = 0,
Qrr
di/dt = 100 A/µs
Test Circuit 1 Switching Time
MIN.
1.0
10
TYP.
20
33
1.5
23
1 200
570
270
35
280
160
170
50
5.0
22
1.0
70
130
MAX.
27
40
2.0
10
±10
UNIT
m
m
V
S
µA
µA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Circuit 2 Gate Charge
D.U.T.
RG
PG.
RG = 10
VGS
0
RL
VDD
VGS
VGS
Wave Form 0 10 %
VGS(on)
ID
90 %
ID
Wave Form
10 %
0
td(on)
ID
tr
td(off)
90 %
90 %
10 %
tf
D.U.T.
IG = 2 mA
PG.
50
RL
VDD
t
t = 1 µs
Duty Cycle 1 %
ton
toff
2
 

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