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Z0107MUF1AA2 Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание
производитель
Z0107MUF1AA2
ST-Microelectronics
STMicroelectronics ST-Microelectronics
Z0107MUF1AA2 Datasheet PDF : 12 Pages
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Characteristics
Z01
Figure 3.
On-state rms current versus
ambient temperature (free air
convection full cycle)
IT(RMS)(A)
1.2
1.0
Rth(j-a) = 60°C/W
(SOT-223)
0.8
Rth (j-a) = 100°C/W
(SMBflat-3L)
0.6
Figure 4.
Relative variation of thermal
impedance versus pulse duration
(Zth(j-a))
K=[Zth(j-a)/Rth(j-a)]
1.00
Z01xxA
Z01xxMUF
Copper surface area
= 5cm²
0.10
Z01xxN
0.4
Rth(j-a) = 150°C/W
(TO-92)
0.2
0.0
0
Tamb (°C)
0.01
tp(s)
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
25
50
75
100
125
Figure 5.
Relative variation of holding
Figure 6.
current and latching current versus
junction temperature (typ. values)
Relative variation of gate trigger
current (IGT) and voltage (VGT)
versus junction temperature
IH, IL [Tj] /IH, IL [Tj=25°C]
2.5
IGT, VGT[Tj] / IGT, VGT[Tj=25 °C]
3.0
2.0
1.5
1.0
IL
0.5
IH
Tj (°C)
0.0
-50
-25
0
25
50
75
100
125
2.5
IGT Q1-Q2
2.0
IGT Q3
IGT Q4
1.5
1.0
VGT Q1-Q2-Q3-Q4
0.5
0.0
-50
-25
0
Tj(°C)
25
50
75
100
125
Figure 7.
Surge peak on-state current versus Figure 8.
number of cycles
Non-repetitive surge peak
on-state current and corresponding
value of I2t sinusoidal pulse width
9 ITSM(A)
8
7
6
5
4
3
2
Repetitive
1 Tamb = 95 °C
0
1
Non repetitive
Tjinitial = 25 °C
10
T = 20 ms
One cycle
Number of cycles
100
1000
ITSM (A), I2t (A2s)
100.0
dI/dt limitation:
20A/µs
10.0
Tj initial = 25°C
ITSM
1.0
0.1
0.01
tp (ms)
0.10
1.00
I2t
10.00
4/12
Doc ID 7474 Rev 10
 

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