datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

K3569(2006) View Datasheet(PDF) - Toshiba

Part Name
Description
View to exact match
K3569 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SK3569
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3569
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.)
High forward transfer admittance: |Yfs| = 8.5S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 600 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
600
V
600
V
±30
V
10
A
40
45
W
363
mJ
10
A
4.5
mJ
150
°C
-55~150
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
2.78
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 6.36 mH, IAR = 10 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
3
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2006-11-08
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]