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Part Name
Description
K3569(2004) View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
K3569
(Rev.:2004)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Toshiba
K3569 Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
– Tc
2.5
COMMON SOURCE
PULSE TEST
2.0
ID
=
12A
1.5
6
1.0
3
VGS
=
10 V
0.5
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
2SK3569
I
DR
– V
DS
100
COMMON SOURCE
Tc
=
25°C
PULSE TEST
10
1
10
5
3
1
VGS
=
0,
−
1 V
0.1
0
−
0.2
−
0.4
−
0.6
−
0.8
−1.0 −
1.2
DRAIN-SOURCE VOLTAGE V
DS
(V)
10000
1000
100
CAPACITANCE – V
DS
Ciss
Coss
10
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
0.1
1
Crss
10
100
DRAIN-SOURCE VOLTAGE V
DS
(V)
V
th
– Tc
5
4
3
2
COMMON SOURCE
1
VDS
=
10 V
ID
=
1 mA
PULSE TEST
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
P
D
– Tc
80
60
40
20
0
0
40
80
120
160
200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500
20
400
300
200
100
0
0
VDS
16
VDD
=
100 V
12
200
400
8
VGS
COMMON SOURCE
ID
=
3 A
4
Tc
=
25°C
PULSE TEST
0
10
20
30
40
50
60
TOTAL GATE CHARGE Q
g
(nC)
4
2004-03-04
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