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Part Name
Description
K30A06J3A View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
K30A06J3A
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅢ)
Toshiba
K30A06J3A Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
50
Common source
Tc
=
25°C
10
65
8
4.5
Pulse Test
40
30
20
4.25
4
3.75
3.5
10
0
0
0.4
0.8
1.2
3.25
3
2.75
1.6
2.0
Drain-source voltage V
DS
(V)
100
Common source
VDS
=
10 V
Pulse Test
80
60
I
D
– V
GS
Tc
= −
55°C
25
100
40
20
0
0
2
4
6
8
Gate-source voltage V
GS
(V)
100
Common source
VDS
=
10 V
Pulse Test
⎪
Y
fs
⎪ −
I
D
Tc
= −
55°C
25
100
10
TK30A06J3A
I
D
– V
DS
100
6
7
5.5
Common source
Tc
=
25°C
8
80
Pulse Test
5
10
60
4.5
40
4
20
3.5
3
0
0
2
4
6
8
10
Drain-source voltage V
DS
(V)
V
DS
– V
GS
2
Common source
Tc
=
25°C
Pulse Test
1.6
1.2
0.8
ID
=
30 A
0.4
15
7.5
0
0
4
8
12
16
20
Gate-source voltage V
GS
(V)
100
Common source
Tc
=
25°C
Pulse Test
R
DS (ON)
−
I
D
VGS
=
4.5 V
10
10
1
1
10
100
Drain Current I
D
(A)
1
0.1
1
10
100
Drain Current I
D
(A)
3
2009-09-29
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