datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

K3918 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K3918 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK3918
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 25 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)1
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 12 A
VGS = 10 V, ID = 24 A
RDS(on)2 VGS = 5.0 V, ID = 12 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Ciss
Coss
Crss
td(on)
tr
td(off)
VDS = 10 V
VGS = 0 V
f = 1 MHz
VDD = 12.5 V, ID = 24 A
VGS = 10 V
RG = 10
Fall Time
tf
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
QG
QGS
QGD
VF(S-D)
VDD = 20 V
VGS = 10 V
ID = 48 A
IF = 48 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 48 A, VGS = 0 V
Qrr
di/dt = 100 A/µs
Note Pulsed
MIN.
2.0
6
TYP.
2.5
12
5.9
11
1300
310
220
13
14
38
14
28
5
10
0.98
27
15
MAX.
10
±100
3.0
7.5
22.2
UNIT
µA
nA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
L
PG.
50
VDD
VGS = 20 0 V
IAS
ID
VDD
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
RG
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
0
Wave Form
td(on)
VGS
90%
90%
10% 10%
tr td(off)
tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50
VDD
2
Data Sheet D17077EJ3V0DS
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]