FQPF5N50CF View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
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FQPF5N50CF Datasheet PDF : 8 Pages
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FQPF5N50CF
500V N-Channel MOSFET
Features
• 5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V
• Low gate charge ( typical 18nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FRFET TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
GD S
TO-220F
FQPF Series
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC
RθJS
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
D
!
G!
●
◀▲
●
●
!
S
FQPF5N50CF
500
5
2.9
20
± 30
300
5
7.3
4.5
38
0.3
-55 to +150
300
FQPF5N50CF
3.31
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
1
FQPF5N50CF Rev. B
www.fairchildsemi.com
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