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K3354 View Datasheet(PDF) - Renesas Electronics

Part Name
Description
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K3354 Datasheet PDF : 0 Pages
2SK3354
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 42 A
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 42 A
RDS(on)2 VGS = 4 V, ID = 42 A
Input Capacitance
Ciss
VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 42 A
Rise Time
tr
VGS = 10 V
Turn-off Delay Time
td(off)
RG = 10
Fall Time
tf
Total Gate Charge
QG
VDD = 48 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
QGD ID = 83 A
Body Diode Forward Voltage
VF(S-D) IF = 83 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 83 A, VGS = 0 V
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
MIN. TYP. MAX. UNIT
10 µA
±10 µA
1.5 2.0 2.5 V
35 59
S
6.3 8.0 m
8.0 12 m
6300
pF
1000
pF
490
pF
100
ns
1500
ns
300
ns
440
ns
106
nC
20
nC
30
nC
1.0
V
55
ns
100
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
L
PG.
50
VDD
VGS = 20 0 V
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VGS
VGS
Wave Form
10%
0
VGS
90%
VDD
ID
90%
ID
ID
0 10%
Wave Form
90%
10%
td(on) tr td(off) tf
ton
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50
VDD
2
Data Sheet D14131EJ4V0DS
 

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