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J160-E Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza
componentes Descripción
fabricante
J160-E
Renesas
Renesas Electronics Renesas
J160-E Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SJ160, 2SJ161, 2SJ162
Absolute Maximum Ratings
Item
Drain to source voltage
2SJ160
2SJ161
2SJ162
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at Tc = 25°C
Symbol
VDSX
VGSS
ID
IDR
Pch Note 1
Tch
Tstg
Value
–120
–140
–160
±15
–7
–7
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown
voltage
2SJ160
2SJ161
2SJ162
Gate to source breakdown voltage
Gate to source cutoff voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Note: 2. Pulse test
(Ta = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V (BR) DSX –120
–140 —
V ID = –10 mA, VGS = 10 V
V
–160 —
V
V (BR) GSS
±15
V IG = ±100 µA, VDS = 0
VGS (off) –0.15
— –1.45
V
ID = –100 mA, VDS = –10 V
VDS (sat)
— –12
V
ID = –7 A, VGS = 0 Note 2
|yfs|
0.7 1.0 1.4
S
ID = –3 A, VDS = –10 V Note 2
Ciss
— 900 —
pF VGS = 5 V, VDS = –10 V,
Coss
— 400 —
pF f = 1 MHz
Crss
40
pF
ton
— 230 —
ns VDD = –20 V ID = –4 A
toff
— 110 —
ns
Rev.2.00 Sep 07, 2005 page 2 of 5
 

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