datasheetbank_Logo   Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name :   

2SK1158-E View Datasheet(PDF) - Renesas Electronics

Part NameDescriptionManufacturer
2SK1158-E Silicon N Channel MOS FET Renesas
Renesas Electronics Renesas
2SK1158-E Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1157, 2SK1158
Reverse Drain Current vs.
Source to Drain Voltage
20
Pulse Test
16
12
8
4
5, 10 V
VGS = 0, –10 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
3
1.0 D = 1
0.5
Normalized Transient Thermal Impedance vs. Pulse Width
TC = 25°C
0.3 0.2
0.1
0.1 0.05
0.02
0.03
1
0.01
Shot
Pulse
0.01
10 µ
100 µ
θch–c (t) = γS (t) • θch–c
θch–c = 2.08°C/W, TC = 25°C
PDM
PW
T
D
=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
D.U.T
Vout Monitor
RL
Vin = 10 V
50
VDD .=. 30 V
Waveforms
90 %
Vin 10 %
Vout 10 %
10 %
td (on)
90 %
90 %
tr
td (off)
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
Direct download click here
 

Share Link : Renesas
All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]