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K1157 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1157 Silicon N Channel MOS FET Renesas
Renesas Electronics Renesas
K1157 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1157, 2SK1158
Static Drain to Source on State
Resistance vs. Temperature
2.0
VGS = 10 V
Pulse Test
1.6
ID = 10 A
1.2
0.8
2, 5 A
0.4
0
–40 0
40 80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
5,000
2,000
di/dt = 100 A/µs, Ta = 25°C
VGS = 0
Pulse Test
1,000
500
200
100
50
0.2
0.5 1.0 2
5 10 20
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500
20
400
VDD = 100 V
16
VDS
300
250 V
400 V
12
VGS
200
8
ID = 7 A
100
VDD = 400 V
4
250 V
100 V
0
0
8
16
24
32
40
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
VDS = 20 V
Pulse Test
20
10
5
–25°C
TC = 25°C
75°C
2
1.0
0.5
0.1 0.2
0.5 1.0 2
5 10
Drain Current ID (A)
5,000
1,000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
100
10
Crss
5
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
VGS = 10 V
VDD
=
30
V
PW = 2 µs, duty < 1%
200
td (off)
100
50
tf
20
tr
10
td (on)
5
0.2 0.5
1.0 2
5 10 20
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
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