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K1157 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1157 Silicon N Channel MOS FET Renesas
Renesas Electronics Renesas
K1157 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1157, 2SK1158
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Case Temperature TC (°C)
Typical Output Characteristics
20
10 V 7 V
6V
16
Pulse Test
12
5V
8
4
VGS = 4 V
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
10 A
6
4
5A
2
ID = 2 A
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
50
20
10
5
2
1.0
0.5
0.2
0.1
0.05
1
DC OpePrWatio=n1(0TCm1=sm2(s1150°sC0h)oµ1t0s) µs
Ta = 25°C
2SK1157
2SK1158
3 10 30 100 300
1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
–25°C
16
VDS = 20 V
Pulse Test
TC = 25°C
12
75°C
8
4
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
VGS = 10 V
1.0
0.5
15 V
0.2
0.1
0.05
0.5 1.0 2
5 10 20
50
Drain Current ID (A)
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