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2SK1158-E View Datasheet(PDF) - Renesas Electronics

Part Name
Description
View to exact match
2SK1158-E
Renesas
Renesas Electronics Renesas
2SK1158-E Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1157, 2SK1158
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1157
2SK1158
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Item
Symbol Min
Drain to source
breakdown voltage
2SK1157 V(BR)DSS
450
2SK1158
500
Gate to source breakdown voltage V(BR)GSS ±30
Gate to source leak current
IGSS
Zero gate voltage drain 2SK1157
IDSS
current
2SK1158
Gate to source cutoff voltage
VGS(off)
2.0
Static drain to source on 2SK1157 RDS(on)
state resistance
2SK1158
Forward transfer admittance
|yfs|
4.0
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Body to drain diode forward voltage VDF
Body to drain diode reverse recovery trr
time
Note: 3. Pulse test
Typ
0.6
0.7
6.5
1050
280
40
15
55
95
40
0.95
320
Ratings
450
500
±30
7
28
7
60
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
±10
250
3.0
0.8
0.9
(Ta = 25°C)
Unit
Test conditions
V ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±25 V, VDS = 0
µA VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
V ID = 1 mA, VDS = 10 V
ID = 4 A, VGS = 10 V *3
S ID = 4 A, VDS = 10 V *3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 4 A, VGS = 10 V,
ns RL = 7.5
ns
ns
V IF = 7 A, VGS = 0
ns IF = 7 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
 

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