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K1157 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1157 Silicon N-Channel MOS FET / 2SK1157, 2SK1158 Hitachi
Hitachi -> Renesas Electronics Hitachi
K1157 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
2SK1157, 2SK1158
5,000
2,000
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/µs, Ta = 25°C
VGS = 0
Pulse Test
1,000
500
200
100
50
0.2
0.5 1.0 2
5 10 20
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500
20
400
VDD = 100 V
16
VDS
250 V
400 V
300
12
VGS
200
8
ID = 7 A
100
VDD = 400 V
4
250 V
100 V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
5,000
1,000
100
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
10
Crss
5
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
VGS = 10 V
VDD
=
30
V
PW = 2 µs, duty < 1%
200
td (off)
100
50
tf
20
tr
10
td (on)
5
0.2 0.5
1.0 2
5 10 20
Drain Current ID (A)
6
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