N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
· Surface mount type device making the following
· Reduction in the number of manufacturing pro-
cesses for 2SK1908-applied equipment.
· High-density surface mount applications.
· Small size of 2SK1908-applied equipment.
0 to 0.3
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
Absolute Maximum Ratings at Ta = 25˚C
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
PW≤10µs, duty cycle≤1%
–55 to +150 ˚C
Electrical Characteristics at Ta = 25˚C
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
| yfs |
100 135 mΩ
135 180 mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
63099TH (KT)/53094MT BX-0927 No.4650–1/4