K2788 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

View to exact match

K2788

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SK2788

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 0.12 Ω typ (VGS = 10 V, ID = 1 A)

• Low drive current

• High speed switching

• 4 V gate drive devices.

REJ03G1033-0200

(Previous: ADE-208-538)

Rev.2.00

Sep.07,2005

Outline

RENESAS Package code: PLZZ0004CA-A

(Package name: UPAK R )

21

3

4

D

1. Gate

2. Drain

G

3. Source

4. Drain

Note: Marking is “VY”

S

*UPAK is a trademark of Renesas Technology Corp.

Rev.2.00 Sep. 07, 2005 page 1 of 6

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