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K1933 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1933 Silicon N Channel MOS FET Renesas
Renesas Electronics Renesas
K1933 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1933
Main Characteristics
Power vs. Temperature Derating
200
150
100
50
0
50
100
150 200
Case Temperature TC (°C)
Typical Output Characteristics
10
10 V 6 V
8
6
Pulse Test
5V
4
4V
2
VGS = 3.5 V
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
5A
0.4
0.2
2A
ID = 1 A
0
4
8 12 16 20
Gate to Source Voltage VGS (V)
Rev.3.00 Apr 27, 2006 page 3 of 6
Maximum Safe Operation Area
50
30
10 µs
10
3
1
0.3
0.1
0.05
1
3 10 30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10
Pulse Test
VDS = 20 V
8
6
Tc = 25°C
4
75°C
–25°C
2
0
2
4
6
8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
10
Pulse Test
5
2
VGS = 10 V
1
0.5
0.2
0.1
0.5 1 2
5 10 20 50
Drain Current ID (A)
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