K1329 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
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K1329 Datasheet PDF : 6 Pages
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2SK1328, 2SK1329
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
2SK1328 V(BR)DSS 450
breakdown voltage 2SK1329
500
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
—
Zero gate voltage 2SK1328 IDSS
—
drain current
2SK1329
Gate to source cutoff voltage VGS(off) 2.0
Static Drain to source 2SK1328 RDS(on) —
on state resistance 2SK1329
—
Forward transfer admittance |yfs|
6.0
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body to drain diode forward
VDF
—
voltage
Body to drain diode reverse
t rr
—
recovery time
Note: 1. Pulse test
Typ Max Unit
—
—
V
—
—
V
—
±10 µA
—
250 µA
—
3.0
V
0.40 0.55 Ω
0.45 0.60
10
—
S
1450 —
pF
410 —
pF
55
—
pF
20
—
ns
70
—
ns
120 —
ns
60
—
ns
1.0
—
V
450 —
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 6 A, VGS = 10 V *1
ID = 6 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 6 A, VGS = 10 V,
RL = 5 Ω
IF = 12 A, VGS = 0
IF = 12 A, VGS = 0,
diF/dt = 100 A/µs
See characteristic curves of 2SK1165, 2SK1166.
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