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K1170 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1170 Silicon N-Channel MOS FET / 2SK1169, 2SK1170 Hitachi
Hitachi -> Renesas Electronics Hitachi
K1170 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
2SK1169, 2SK1170
5,000
Body to Drain Diode Reverse
Recovery Time
2,000
di/dt = 100 A/µs, Ta = 25°C
VGS = 0
Pulse Test
1,000
500
200
100
50
0.5 1.0 2
5 10 20 50
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500
20
VDD = 100 V
400
250 V
16
400 V
300
12
VDS
VGS
200
8
100
V DD = 400 V
ID = 20 A
4
250 V
100 V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
10,000
1,000
Typical Capacitance
vs. Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
100
Crss
10
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
200
td (off)
100
tf
50
tr
td (on)
20
VGS = 10 V
VDD
=
30
V
10 PW = 2 µs, duty < 1%
5
0.5 1.0 2
5 10 20
50
Drain Current ID (A)
6
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