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K3152 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
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K3152
2SK3152 - Silicon N Channel MOS FET High Speed Power Switching / TO–220FM Package
Hitachi -> Renesas Electronics
K3152 Datasheet PDF : 9 Pages
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2SK3152
1000
500
Body–Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
V
GS
= 0, Ta = 25 °C
200
100
50
20
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I
DR
(A)
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
Ciss
500
200
Coss
100
50
Crss
20 V
GS
= 0
f = 1 MHz
10
0
10
20 30 40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
200
20
I
D
= 20 A
160
V
DD
= 100 V
16
50 V
25 V
120
12
80
V
DS
V
GS
8
40
V
DD
= 100 V
4
50 V
25 V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Switching Characteristics
500
300
t
d(off)
100
tf
30
10
tr
t
d(on)
3
1
0.1 0.3
V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty < 1 %
1
3
10 30 100
Drain Current I
D
(A)
5
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