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Part Name
Description
K10A50D View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
K10A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Toshiba
K10A50D Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
– Tc
2
COMMON SOURCE
VGS
=
10 V
PULSE TEST
1.6
10
1.2
5
ID
=
2.5 A
0.8
0.4
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
TK10A50D
I
DR
– V
DS
100
COMMON SOURCE
Tc
=
25°C
PULSE TEST
10
1
10
5
31
VGS
=
0 V
0.1
0
−
0.3
−
0.6
−
0.9
−
1.2
−
1.5
DRAIN-SOURCE VOLTAGE V
DS
(V)
10000
1000
100
CAPACITANCE – V
DS
Ciss
Coss
10
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
0.1
1
Crss
10
100
DRAIN-SOURCE VOLTAGE V
DS
(V)
V
th
– Tc
5
4
3
2
COMMON SOURCE
1
VDS
=
10 V
ID
=
1 mA
PULSE TEST
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
P
D
– Tc
50
40
30
20
10
0
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500
20
VDS
400
300
200
100
16
200
VDD
=
100 V
12
400
VGS
8
COMMON SOURCE
ID
=
10 A
Tc
=
25°C
4
PULSE TEST
0
0
0
6
12
18
24
30
TOTAL GATE CHARGE Q
g
(nC)
4
2013-11-01
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