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K1160 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1160 Silicon N-Channel MOS FET / TO-220AB Package Renesas
Renesas Electronics Renesas
K1160 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
2SK1159, 2SK1160
5,000
2,000
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/µs, Ta = 25°C
VGS = 0
Pulse Test
1,000
500
200
100
50
0.2 0.5 1.0 2
5 10 20
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500
20
VDD = 100 V
250 V
400
400 V
VGS
16
VDS
300
12
200
8
100
VDD = 400 V
250 V
ID = 8 A 4
100 V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
10,000
1,000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
100
Crss
10
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
VGS
=
10
V,
VDD
=
30
V
PW = 2 µs, duty < 1%
200
td (off)
100
50
tf
tr
20
td (on)
10
5
0.2 0.5 1.0 2
5 10 20
Drain Current ID (A)
6
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